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savantic semiconductor product specification silicon npn power transistors 2sC3012 d escription with to-3pn package complement to type 2sa1232 high transition frequency applications audio frequency power amplifier. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 130 v v ceo collector-emitter voltage open base 130 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sC3012 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 0.6 1.5 v v besat base-emitter saturation voltage i c =5a; i b =0.5a 1.3 2.0 v i cbo collector cut-off current v cb =130v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =2a ; v ce =5v 60 320 h fe-2 dc current gain i c =5a ; v ce =5v 40 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 150 pf f t transition frequency i c =1a ; v ce =5v 60 mhz h fe-1 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2sC3012 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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